Ergebnisse 769 – 816 von 1036 werden angezeigt
MCP 14E8-E/P – 2,0 A Dual-MOSFET-Treiber, 1 x inver. / 1 x nicht inver., DIP-8
MCP 14E8-E/SN – 2,0 A Dual-MOSFET-Treiber, 1 x inver. / 1 x nicht inver., SO-8
MCP 14E9-E/P – 3,0 A Dual-MOSFET-Treiber, 2 x invertierend, DIP-8
MCP 14E9-E/SN – 3,0 A Dual-MOSFET-Treiber, 2 x invertierend, SO-8
MCP 87030T-U/MF – High-Speed N-Kanal MOSFET, 25 V, RDS(ON) 0,0033 Ohm, PDFN-8
MMBF 170-7-F – MOSFET, N-Kanal, 60 V, 0,5 A, Rds(on) 5,0 Ohm, SOT-23
MMBF 170LT1G – MOSFET, N-Kanal, 60 V, 0,5 A, Rds(on) 5 Ohm, SOT-23
MMBF4391LT1G – N-Kanal-JFET, 30V, 50-150mA, 0,225W, SOT-23
MMBF4392LT1G – N-Kanal-JFET, 30V, 25-75mA, 0,225W, SOT-23
MMBF4393LT1G – N-Kanal-JFET, 30V, 5-30mA, 0,225W, SOT-23
MMBF5103 – N-Kanal-JFET, 40V, 10-40mA, 0,35W, SOT-23
MMBFJ175 – P-Kanal-JFET, -30V, -7 bis -60mA, 0,225W, SOT-23
MMBFJ176 – P-Kanal-JFET, -30V, -2 bis -25mA, 0,225W, SOT-23
MMBFJ177 – P-Kanal-JFET, -30V, -1,5 bis -20mA, 0,225W, SOT-23
MMBFJ202 – N-Kanal-JFET, 40V, 0,9-4,5mA, 0,35W, SOT-23
MSC035SMA170S – SiC-MOSFET N-Kanal, 1700 V, 59 A, Rds(on) 0,035 Ohm, TO-268 (D3P
MSC400SMA330B4 – SiC-MOSFET N-Kanal, 3300 V, 11 A, Rds(on) 0,416 Ohm, TO-247-4L
MSC750SMA170B – SiC-MOSFET N-Kanal, 1700 V, 7 A, Rds(on) 0,750 Ohm, TO-247
NDS 0610 SMD – MOSFET, P-CH, 60V, 0,12A, 0,36W, SOT-23
NDS 355 SMD – N-Kanal-FET logL, 30 V, 1,7 A, RDS(on) 0,085 Ohm, SOT-23
NTE 312 – JFET, N-CH, 30V 15mA, 0,36W, TO-92
NTR4101PT1G – MOSFET, P-CH, 20V, 2,4A, 0,73W, SOT-23
NX2301P NXP – MOSFET, P-Kanal, -20 V, -2 A, RDS(on) 0,1 Ohm , SOT-23
PMBF 170 NXP – MOSFET, N-Kanal, 60 V, 0,3 A, Rds(on) 2,8 Ohm, SOT-23
RFD14N05L – MOSFET, N-CH, 50V, 14A, 48W, I-PAK
SCT2160KEC – SiC-MOSFET, N-Ch, 1200V, 22A, 165W, 0,16R , TO247
SCT2450KEC – SiC-MOSFET N-Ch 1200V 10A 85W 0,585R , TO247
SCT3022ALGC11 – SiC-MOSFET N-Ch 650V 93A 339W 0,0286Ohm, TO247
SCT3080KLGC11 – SiC-MOSFET N-Kanal, 1200 V, 31 A, Rds(on) 0,08 Ohm, TO-247
SCT3120ALGC11 – SiC-MOSFET N-Ch 650V 21A 103W 0,156R , TO247
SCT3160KLGC11 – SiC-MOSFET N-Kanal, 1200 V, 17 A, RDS(on) 0,16 Ohm, TO247
SI2307CDS-T1-GE3 – MOSFET P-Kanal,-30 V, 2,7 A,Rds(on)0,088 Ohm, SOT-23
SI2308BDS-T1-GE3 – MOSFET N-Kanal, 60 V, 1,9 A, Rds(on) 0,13 Ohm, SOT-23
SI4100DY-GE3 – MOSFET N-Ch 100V 6,8A 0,063R SO8
SI4114DY-GE3 – MOSFET N-Kanal, 20 V, 20 A, Rds(on) 0,0049 Ohm, SO8
SI4134DY-GE3 – MOSFET N-Kanal, 30 V, 14 A, Rds(on) 0,0115 Ohm, SO8
SI4156DY-GE3 – MOSFET N-Kanal, 30 V, 24 A, Rds(on) 0,0048 Ohm, SO8
SI4162DY-GE3 – MOSFET N-Kanal, 30 V, 19,3 A, RDS(on) 0,0079 Ohm, SO8
SI4174DY-GE3 – MOSFET N-Kanal, 30 V, 17 A, Rds(on) 0,0078 Ohm, SO8
SI4401DDY-GE3 – MOSFET P-Kanal, -40 V, -16,1 A, RDS(on) 0,015 Ohm, SO8
SI4425DDY-GE3 – MOSFET N-Kanal, 400 V, 0,17 A, Rds(on) 14,3 Ohm, SOT-223
SI4431CDY-GE3 – MOSFET P-Kanal, -30 V, -9 A, Rds(on) 0,032 Ohm, SO8
SI4434DY-GE3 – MOSFET N-Kanal, 250 V, 3 A, Rds(on) 0,129 Ohm, SO8
SI4435DDY-GE3 – MOSFET P-Kanal, -30 V, -11,4 A, Rds(on) 0,0195 Ohm, SO8
SI4447ADY-GE3 – MOSFET P-Ch 40V 7,2A 0,045R SO8
SI4477DY-GE3 – MOSFET P-Kanal, -20 V, -26,6 A, Rds(on) 0,0062 Ohm, SO-8
SI4559ADY-GE3 – Dual-MOSFET N+P-Kanal, 60/-60 V, 5,3/-3,9 A, RDS(on) 0,058/0,12
SI4840BDY-GE3 – MOSFET N-Kanal, 40 V, 19 A, RDS(on) 0,009 Ohm, SO8