TSM3N90CP – MOSFET N-Ch 900V 2,5A 5,1R TO252

N-Channel Power MOSFETFeatures�Low RDS(ON) 4.3R (Typ.)�Low gate charge typical @ 17nC (Typ.)�Low Crss typical @ 8.7pF (Typ.)General DescriptionThe TSM3N90 N-Channel Power MOSFET is produced by new advance planar process. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.