N-Channel Power MOSFETFEATURES�Advanced planar process�100% avalanche tested�Low RDS(ON) 8R (Typ.)�Low gate charge typical @ 6.1 nC (Typ.)�Low Crss typical @4.2pF (Typ.)APPLICATION�Power Supply�Lighting�Charger
Beschreibung
Zusätzliche Informationen
| Marke |
|---|
