STP24N60DM2 – MOSFET N-Ch+Z-Dio 600V 18A 150W 0,2R TO220

N-channel 600 V, 0.175 O typ., 18 A FDmesh II Plus™ low Qg Power MOSFETsFeatures• Extremely low gate charge and input capacitance• Lower RDS(on) x area vs previous generation• Low gate input resistance• 100% avalanche tested• Zener-protected• Extremely high dv/dt and avalanche capabilitiesApplications• Switching applications