STD7NM60N – MOSFET N-Kanal, 600 V, 5 A, RDS(on) 0,8 Ohm, TO252

MDmesh™ II Power MOSFETsFeatures100% avalanche testedLow input capacitance and gate chargeLow gate input resistanceDescriptionThese devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’slowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters.ApplicationsSwitching applications