STripFET™ VI DeepGATE™ Power MOSFETFeaturesRDS(on) * Qg industry benchmarkExtremely low on-resistance RDS(on)High avalanche ruggednessLow gate input resistanceDescriptionThis device is a P-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packagesApplicationsSwitching applicationsLCC converters, resonant converters
STD26P3LLH6 – MOSFET P-Ch 30V 12A 0,03R TO252
1,20 €
- Lieferzeit: 1-2 Werktage
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