STripFET™ F6 Power MOSFETsFeaturesVery low on-resistanceVery low gate chargeHigh avalanche ruggednessLow gate drive power lossDescriptionThese devices are P-channel Power MOSFETs developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFETs exhibit very low RDS(on) in allpackages.ApplicationsSwitching applications
STD10P6F6 – MOSFET P-Ch 60V 10A 0,16R TO252
0,99 €
- Lieferzeit: 1-2 Werktage
- begrenzte Stückzahl, Lagernd
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