Power MOSFETN-Channel Enhancement ModeFast Intrinsic DiodeFeaturesSilicon Chip on Direct-Copper Bond (DCB) SubstrateIsolated Mounting SurfaceLow Intrinsic Gate Resistance2500V~ Electrical IsolationDynamic dv/dt RatingAvalanche RatedFast Intrinsic RectifierLow QGLow RDS(on)Low Drain-to-Tab CapacitanceLow Package InductanceAdvantagesHigh Power DensityEasy to MountSpace Savings
IXFR80N60P3 – MOSFET N-Ch 600V 48A 540W 0,085R TO247-Isoplus
16,90 €
- Lieferzeit: 1-2 Werktage
- ab Lager