Power MOSFET(Electrically Isolated Tab)N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeFeaturesSilicon chip on Direct-Copper-Bond substrate- High power dissipation- Isolated mounting surface- 2500V electrical isolationInternational standard packageFast recovery diodeUnclamped Inductive Switching (UIS) ratedLow package inductance- easy to drive and to protectAdvantagesEasy to mountSpace savingsHigh power density
IXFR36N60P – MOSFET N-Ch 600V 20A 208W 0,2R TO247-Isoplus
13,20 €
- Lieferzeit: 1-2 Werktage
- ab Lager