Power MOSFETHiPerFETN-Channel Enhancement Mode = 300nsAvalanche RatedFast Intrinsic DiodeFeaturesInternational standard packagesFast recovery diodeUnclamped Inductive Switching (UIS) ratedLow package inductance- easy to drive and to protectAdvantagesEasy to mountSpace savingsHigh power densityApplications:High Voltage Switched-mode and resonant-mode power suppliesHigh Voltage Pulse Power ApplicationsHigh Voltage Discharge circuits in Lasers Pulsers, Spark Igniters, RF GeneratorsHigh Voltage DC-DC convertersHigh Voltage DC-AC inverters
IXFH12N120P – MOSFET N-Ch 1200V 12A 543W 1,35R TO247AD
16,95 €
- Lieferzeit: 1-2 Werktage
- ab Lager