HEXFET® Power MOSFETFeaturesLogic LevelAdvanced Process TechnologyUltra Low On-Resistance175°C Operating TemperatureFast SwitchingRepetitive Avalanche Allowed up to TjmaxLead-FreeDescriptionThis HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operatingtemperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
IRLZ44ZSPBF – MOSFET N-LogL 55V 51A 0,0135R D2Pak
1,30 €
- Lieferzeit: 1-2 Werktage
- ab Lager