IRLZ24NSPBF – MOSFET N-LogL, 55 V, 18 A, Rds(on) 0,06 Ohm, D2Pak

HEXFET® Power MOSFETFeaturesLogic-Level Gate DriveAdvanced Process TechnologySurface Mount (IRLZ24NS)175°C Operating TemperatureFast SwitchingFully Avalanche RatedDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETsare well known for, provides the designer with an extremelyefficient and reliable device for use in a wide variety ofapplications.