HEXFET Power MOSFETFeaturesKey parameters optimized for Class-D audio amplifier applicationsLow RDSON for improved efficiencyLow QG and QSW for better THD and improved efficiencyLow QRR for better THD and lower EMI175°C operating junction temperature for ruggednessCan deliver up to 300W per channel into 8R load in half-bridge configuration amplifier
IRFS4020PBF – MOSFET N-Ch 200V 18A 0,105R D2Pak
1,70 €
- Lieferzeit: 1-2 Werktage
- ab Lager