IRFL4310PBF – MOSFET N-Kanal, 100 V, 2,2 A, Rds(on) 0,2 Ohm, SOT223

HEXFET® Power MOSFETSurface MountDynamic dv/dt RatingFast SwitchingEase of ParallelingAdvanced Process TechnologyUltra Low On-ResistanceLead-FreeDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are wellknown for, provides the designer with an extremely efficientand reliable device for use in a wide variety of applications.