IRFL024ZPBF – MOSFET N-Kanal, 55 V, 5,1 A, Rds(on) 0,0462 Ohm, SOT-223

HEXFET® Power MOSFETFeaturesAdvanced Process TechnologyUltra Low On-Resistance150°C Operating TemperatureFast SwitchingRepetitive Avalanche Allowed up to TjmaxLead-FreeDescriptionThis HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitiveavalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.