HEXFET® Power MOSFETSurface MountAdvanced Process TechnologyUltra Low On-ResistanceDynamic dv/dt RatingFast SwitchingFully Avalanche RatedLead-FreeDescriptionFifth Generation HEXFET® MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are wellknown for, provides the designer with an extremely efficientand reliable device for use in a wide variety of applications.
IRFL014NPBF – MOSFET N-Ch 55V 2,7A 0,16R SOT223
0,60 €
- Lieferzeit: 1-2 Werktage
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