IRF8313PBF – Dual-MOSFET N-Kanal, 30 V, 9,7 A, Rds(on) 0,0125 Ohm, SO-8

HEXFET Power MOSFETApplicationsLoad SwitchDC/DC ConversionBenefitsLow Gate Charge and Low RDS(on)Fully Characterized Avalanche Voltage and Current20V VGS Max. Gate Rating100% Tested for RGLead-Free (Qualified to 260°C Reflow)RoHS Compliant (Halogen Free)DescriptionThe IRF8313PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package. The IRF8313PbF has been optimized for parameters that arecritical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors for notebook and Netcom applications.